Semiconductor device manufacturing and processing methods and apparatuses for forming a film

摘要

A semiconductor device manufacturing method includes: accommodating a substrate in a processing chamber; and supplying a silicon-based gas and an amine-based gas into the processing chamber that is heated to form a film including silicon and carbon on the substrate. The forming of the film including silicon and carbon includes: supplying the silicon-based gas and the amine-based gas into the processing chamber and confining the silicon-based gas and the amine-based gas in the processing chamber; maintaining a state in which the silicon-based gas and the amine-based gas are confined in the processing chamber, and exhausting an inside of the processing chamber.

主权项

1. A semiconductor device manufacturing method comprising:
accommodating a substrate in a processing chamber; and supplying a silicon-based gas and an amine-based gas into the processing chamber that is heated to form a film including silicon and carbon on the substrate, wherein; (i) the forming of the film including silicon and carbon includes:
supplying the silicon-based gas and the amine-based gas into the processing chamber and confining the silicon-based gas and the amine-based gas in the processing chamber;maintaining a state in which the silicon-based gas and the amine-based gas are confined in the processing chamber, andexhausting an inside of the processing chamber; and (ii) in the forming of the film including silicon and carbon, an atomic concentration of carbon in the film including silicon and carbon is controlled according to a time when the state in which the silicon-based gas and the amine-based gas are confined in the processing chamber is maintained.