Diode structure compatible with FinFET process

摘要

An embodiment integrated circuit (e.g., diode) and method of making the same. The embodiment integrated circuit includes a well having a first doping type formed over a substrate having the first doping type, the well including a fin, a source formed over the well on a first side of the fin, the source having a second doping type, a drain formed over the well on a second side of the fin, the drain having the first doping type, and a gate oxide formed over the fin, the gate oxide laterally spaced apart from the source by a back off region of the fin. The integrated circuit is compatible with a FinFET fabrication process.

主权项

1. An integrated circuit, comprising:
a well having a first doping type formed over a substrate having the first doping type, the well including a fin; a source formed over the well on a first side of the fin, the source having a second doping type, the first doping type being different than the second doping type; a drain formed over the well on a second side of the fin, the drain having the first doping type; and a gate oxide formed over the fin, wherein a first portion of the well is interposed between the source and the drain, the gate oxide laterally spaced apart from an interface between the first portion of the well and the source by a back off region of the fin, an uppermost surface of the fin co-planar with a top surface of the back off region, the gate oxide and the drain connected to a contact shared by the gate oxide and the drain.