Method of forming nonvolatile memory device

摘要

A nonvolatile memory device and a method of forming the same, the device including a semiconductor substrate; a plurality of gate patterns stacked on the semiconductor substrate; inter-gate dielectric patterns between the gate patterns; active pillars sequentially penetrating the gate patterns and the inter-gate dielectric patterns to contact the semiconductor substrate; and a gate insulating layer between the active pillars and the gate patterns, wherein corners of the gate patterns adjacent to the active pillars are rounded.

主权项

1. A method of forming a nonvolatile memory device, the method comprising:
providing a semiconductor substrate; repeatedly and alternately stacking sacrificial layers and inter-gate dielectric layers on the semiconductor substrate; forming an active pillar that penetrates the inter-gate dielectric layers and the sacrificial layers to contact the semiconductor substrate; patterning the inter-gate dielectric layers and the sacrificial layers at a position spaced from the active pillar to form a first opening; removing the sacrificial layers through the first opening; and forming a gate pattern on a region where the sacrificial layers are removed, wherein a corner of the gate pattern adjacent to the active pillar is formed to be rounded, wherein forming the active pillar includes:
patterning the inter-gate dielectric layers and the sacrificial layers to form a second opening;conformally forming an auxiliary insulating layer, a gate insulating layer and a first semiconductor layer on the semiconductor substrate where the second opening is formed;performing an anisotropic etching process on the first semiconductor layer, the gate insulating layer, and the auxiliary insulating layer to form an auxiliary insulating pattern, a gate insulating pattern, and a first semiconductor pattern covering a sidewall of the second opening; andforming a second semiconductor layer covering the semiconductor substrate exposed through the second opening and a sidewall of the first semiconductor pattern, and wherein the second semiconductor layer and the first semiconductor pattern constitute the active pillar.