发明名称 Method for controlling a transistor and control circuit
摘要 A description is given of a method for the pulsed control of a transistor which has a control terminal and a load path. The load path of the transistor is connected in series with a load. A control circuit is provided for a transistor. In the method, the transistor is controlled with a control pulse of a first type, which has a first control level at least for a first time duration, before a control pulse of a second type, which has a second control level, which is higher in comparison with the first control level. A voltage across the load path of the transistor is evaluated and the pulsed control is terminated if the voltage across the load path exceeds a predefined threshold value.
申请公布号 US9093836(B2) 申请公布日期 2015.07.28
申请号 US201113984268 申请日期 2011.12.20
申请人 Infineon Technologies Austria AG;ZF Friedrichshafen AG 发明人 Reiter Tomas Manuel;Kett Juergen;Doemel Bernhard
分类号 H03K17/0812;H02H3/20;H03K17/082;H03K17/18;G01R31/02 主分类号 H03K17/0812
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A method for pulsed control of a transistor which has a control terminal and a load path that is connected in series with a load, the method comprising: controlling the transistor with a control pulse of a first type, that has a first control level at least for a first time duration before a control pulse of a second type that has a second control level, the second control level being higher than the first control level; evaluating a voltage across the load path of the transistor; and terminating the pulsed control when the voltage across the load path exceeds a predefined threshold value.
地址 Villach AT