Process for fabricating gallium arsenide devices with copper contact layer

摘要

Systems, apparatuses, and methods related to the design, fabrication, and manufacture of gallium arsenide (GaAs) integrated circuits are disclosed. Copper can be used as the contact material for a GaAs integrated circuit. Metallization of the wafer and through-wafer vias can be achieved through copper plating processes disclosed herein. Various protocols can be employed during processing to avoid cross-contamination between copper-plated and non-copper-plated wafers. GaAs integrated circuits can be singulated, packaged, and incorporated into various electronic devices.

主权项

1. A method of manufacturing a GaAs integrated circuit including a copper backside, said method comprising:
identifying a lot of GaAs wafers configured to receive a copper backside, each of the wafers mounted on a respective carrier; depositing a desired thickness of copper on a backside of each of the GaAs wafers; forming a scribing street by removing a portion of said copper from each of the GaAs wafers; depositing a protective layer of conductive material on the backside of each of the GaAs wafers; and debonding each of the GaAs wafers from said respective carrier.