| 主权项 |
1. A film deposition apparatus for depositing a film on a substrate by supplying a reaction gas to an upper surface of the substrate in a vacuum chamber, the film deposition apparatus comprising:
a susceptor provided in the vacuum chamber, wherein substrate receiving areas are formed along a circle whose center lies in a center portion of the susceptor; a main gas supplying portion provided opposing the susceptor in order to supply the reaction gas to the substrate receiving areas of the susceptor; a compensation gas supplying portion configured to supply the reaction gas to an upper surface of the susceptor in order to compensate for concentration of the reaction gas supplied from the main gas supplying portion along a radius direction of the susceptor; and a rotation mechanism configured to rotate the susceptor relative to the main gas supplying portion and the compensation gas supplying portion around the center portion of the susceptor, wherein the compensation gas supplying portion includes at least first and second compensation gas nozzles arranged to sandwich the main gas supplying portion, each of the first and second compensation gas nozzles extending from one of a circumferential portion and the center portion of the susceptor towards the other one of the circumferential portion and the center portion, wherein gas ejection openings are formed in the each of the first and second compensation gas nozzles along a longitudinal direction of the each of the first and second compensation gas nozzles, wherein a location of an area where the gas ejection openings are formed in one of the first and second compensation gas nozzles in the radius direction of the susceptor is different from that of the other of the first and second compensation gas nozzles, wherein the film is formed by supplying the reaction gas only from the main gas supplying portion, and a thickness distribution of the film is measured, thereby obtaining a gas concentration distribution of the reaction gas in a radius direction of the substrate, and wherein an amount of the reaction gas supplied from each of the first and second compensation gas nozzles is determined based on the gas concentration distribution of the reaction gas, wherein each of the at least first and second compensation gas nozzles includes:
an outer tube in which the gas ejection openings are formed along a direction from one of the circumferential portion and the center portion of the susceptor towards the other one of the circumferential portion and the center portion;an inner member provided concentrically within the outer tube with a gap between the inner member and the outer tube, wherein the inner member is configured as one of a tube member and a rod member, anda conductance adjusting member provided in at least a part of the inner member along a longitudinal direction of the inner member in order to adjust gas conductance of a space in the gap above the gas ejection openings of the outer tube; wherein the film deposition apparatus further comprises a motor configured to rotate the inner member relative to the outer tube, and the inner member has an end portion that sticks out from the vacuum chamber and is connected to the motor so as to rotate the inner member having the conductance adjusting member along a horizontal axis of the inner member, thereby moving the conductance adjusting member between a first position closer to the gas ejection openings of the outer tube and a second position away from the gas ejection openings of the outer tube. |
