Three-dimensional memory comprising discrete read/write-voltage generator die

摘要

The present invention discloses a discrete three-dimensional memory (3D-M). Its 3D-M arrays are located on at least one 3D-array die, while its read/write-voltage generator (VR/VW-generator) is located on a separate peripheral-circuit die. The VR/VW-generator generates at least a read and/or write voltage to the 3D-array die. A single VR/VW-generator die can support multiple 3D-array dies.

主权项

1. A discrete three-dimensional memory (3D-M), comprising:
a 3D-array die comprising at least a 3D-M array including a plurality of vertically stacked memory cells; a peripheral-circuit die comprising at least a portion of a read/write-voltage generator for providing said 3D-array die with at least a read voltage and/or a write voltage other than the voltage supply, wherein said portion of said read/write-voltage generator is absent from said 3D-array die; wherein said peripheral-circuit die comprises fewer back-end layers than said 3D-array die; and, said 3D-array die and said peripheral-circuit die are separate dice.