发明名称 |
Controlling an epitaxial growth process in an epitaxial reactor |
摘要 |
A system for controlling an epitaxial growth process in an epitaxial reactor. The system includes a processor for setting up a modeled output parameter value as a linear function of the actual output parameter value and a second set of thermocouple offset parameter values. The processor also determines a distance between a target output parameter value and the modeled output parameter value. |
申请公布号 |
US9090991(B2) |
申请公布日期 |
2015.07.28 |
申请号 |
US201113278723 |
申请日期 |
2011.10.21 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
Schiekofer Manfred;Foglietti Pietro;Maier Robert |
分类号 |
C30B25/10;C30B25/16;C30B23/00;C30B23/06;C30B29/52 |
主分类号 |
C30B25/10 |
代理机构 |
|
代理人 |
Keagy Rose Alyssa;Cimino Frank D. |
主权项 |
1. A system for controlling an epitaxial growth process in an epitaxial reactor, the system comprising:
an epitaxial reactor for performing a first run of the epitaxial growth process, and controlling a temperature of the epitaxial growth process during the first run by a temperature measuring device that determines the temperature based on a first set of thermocouple offset parameter values; and a controller for determining a second set of thermocouple offset parameters for a second run comprising:
an exponential weighted moving average (EWMA) filter for receiving an actual output parameter value of a growth process of the first run that is output from a data analysis module;a processor for setting up a modeled output parameter value as a linear function of the actual output parameter value and a second set of thermocouple offset parameter values, the processor also determining a distance between a target output parameter value and the modeled output parameter value; andan optimizer for determining the second set of thermocouple offset parameter values as a set of thermocouple offset values that provides the minimum distance between the modeled output parameter value and the target parameter value; wherein the epitaxial reactor also performs a second run of the epitaxial growth process, and controls a temperature of the epitaxial growth process during the second run by a temperature measuring device that measures temperature using the determined second set of thermocouple offset parameter values from the optimizer. |
地址 |
Dallas TX US |