| 发明名称 |
Encapsulant for a semiconductor device |
| 摘要 |
A mold compound is provided for encapsulating a semiconductor device (101). The mold compound comprises at least approximately 70% by weight silica fillers, at least approximately 10% by weight epoxy resin system, and beneficial ions that are beneficial with respect to copper ball bond corrosion. A total level of the beneficial ions in the mold compound is at least approximately 100 ppm. |
| 申请公布号 |
US9093383(B1) |
申请公布日期 |
2015.07.28 |
| 申请号 |
US201414268420 |
申请日期 |
2014.05.02 |
| 申请人 |
Freescale Semiconductor, Inc. |
发明人 |
Chopin Sheila F.;Mathew Varughese;Higgins, III Leo M.;Lee Chu-Chung |
| 分类号 |
H01L23/29;H01L23/00;C08K3/36;C08K3/08;C08K3/32;C08K3/28 |
主分类号 |
H01L23/29 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A mold compound for encapsulating an electronic device, the mold compound comprising:
silica fillers; epoxy resin system; and beneficial ions that are beneficial with respect to copper ball bond corrosion, wherein a total level of the beneficial ions in the mold compound is at least approximately 150 ppm, and the beneficial ions are ions selected from the group consisting of phosphate (PO4)3−, nitrate (NO3)−, and nitrite (NO2)−. |
| 地址 |
Austin TX US |
