| 发明名称 | Mask blank, method of manufacturing the same, transfer mask, and method of manufacturing the same | ||
| 摘要 | Provided is a method of manufacturing a mask blank that is improved in cleaning resistance to ozone cleaning or the like, thus capable of preventing degradation of the mask performance due to the cleaning. The method is for manufacturing a mask blank having, on a substrate, a thin film which is formed at its surface with an antireflection layer made of a material containing a transition metal, and carries out a treatment of causing a highly concentrated ozone gas with a concentration of 50 to 100 vol % to act on the antireflection layer to thereby form a surface modified layer comprising a strong oxide film containing an oxide of the transition metal at a surface of the antireflection layer. | ||
| 申请公布号 | US9091934(B2) | 申请公布日期 | 2015.07.28 |
| 申请号 | US201113995751 | 申请日期 | 2011.12.22 |
| 申请人 | HOYA CORPORATION | 发明人 | Sakai Kazuya;Hashimoto Masahiro |
| 分类号 | G03F1/50;H01L21/3065;G03F1/46;H01L21/308;H01L21/3213;G03F1/82 | 主分类号 | G03F1/50 |
| 代理机构 | Sughrue Mion, PLLC | 代理人 | Sughrue Mion, PLLC |
| 主权项 | 1. A method of manufacturing a mask blank having, on a substrate, a thin film which is formed at its surface with an antireflection layer made of a material containing a transition metal, comprising: after forming the thin film having the antireflection layer, carrying out a treatment of causing a highly concentrated ozone gas with a concentration of 50 to 100 vol % and an unsaturated hydrocarbon gas to act on the antireflection layer to thereby form a surface modified layer comprising a strong oxide film containing an oxide of the transition metal at a surface of the antireflection layer. | ||
| 地址 | Tokyo JP | ||