发明名称 |
Resin composition, resist underlayer film, resist underlayer film-forming method and pattern-forming method |
摘要 |
A resin composition for forming a resist underlayer film includes a resin that includes an aromatic ring, and a crosslinking agent having a partial structure represented by a following formula (i). X represents an oxygen atom, a sulfur atom, *—COO— or —NRA—. R1 represents a hydrogen atom or a C1-30 monovalent hydrocarbon group. R2 represents a hydroxy group, a sulfanil group, a cyano group, a nitro group, a C1-30 monovalent hydrocarbon group, a C1-30 monovalent oxyhydrocarbon group or a C1-30 monovalent sulfanilhydrocarbon group. p is an integer of 1 to 3.; |
申请公布号 |
US9091922(B2) |
申请公布日期 |
2015.07.28 |
申请号 |
US201213714406 |
申请日期 |
2012.12.14 |
申请人 |
JSR CORPORATION |
发明人 |
Nakafuji Shin-ya;Murakami Satoru;Koumura Kazuhiko;Matsumura Yuushi;Motonari Masayuki;Mizoguchi Katsuhisa |
分类号 |
G03F7/11;G03F7/09;H01L21/027 |
主分类号 |
G03F7/11 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A resin composition for forming a resist underlayer film, comprising:
a resin that comprises an aromatic ring; and a crosslinking agent represented by formula (B-1): wherein Me is a methyl group. |
地址 |
Tokyo JP |