发明名称 Resin composition, resist underlayer film, resist underlayer film-forming method and pattern-forming method
摘要 A resin composition for forming a resist underlayer film includes a resin that includes an aromatic ring, and a crosslinking agent having a partial structure represented by a following formula (i). X represents an oxygen atom, a sulfur atom, *—COO— or —NRA—. R1 represents a hydrogen atom or a C1-30 monovalent hydrocarbon group. R2 represents a hydroxy group, a sulfanil group, a cyano group, a nitro group, a C1-30 monovalent hydrocarbon group, a C1-30 monovalent oxyhydrocarbon group or a C1-30 monovalent sulfanilhydrocarbon group. p is an integer of 1 to 3.;
申请公布号 US9091922(B2) 申请公布日期 2015.07.28
申请号 US201213714406 申请日期 2012.12.14
申请人 JSR CORPORATION 发明人 Nakafuji Shin-ya;Murakami Satoru;Koumura Kazuhiko;Matsumura Yuushi;Motonari Masayuki;Mizoguchi Katsuhisa
分类号 G03F7/11;G03F7/09;H01L21/027 主分类号 G03F7/11
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A resin composition for forming a resist underlayer film, comprising: a resin that comprises an aromatic ring; and a crosslinking agent represented by formula (B-1): wherein Me is a methyl group.
地址 Tokyo JP