发明名称 Method of producing crystals of nitrides of group 13 elements and melt compositions
摘要 It is provided a method of producing a crystal of a nitride of a group 13 element in a melt by flux method. The melt is generated by heating a composition including a material for the group 13 element, a material for at least one of an alkali metal and an alkaline earth metal and a liquid material for germanium. Upon producing a crystal of a nitride of a group 13 element in a melt by flux method, it is thereby possible to reduce in-plane distribution of a property such as carrier density of the thus obtained crystal of a nitride of a group 13 element.
申请公布号 US9090988(B2) 申请公布日期 2015.07.28
申请号 US201414314227 申请日期 2014.06.25
申请人 NGK INSULATORS, LTD. 发明人 Sakai Masahiro;Iwai Makoto
分类号 C30B19/02;C30B9/12;C30B29/40;H01L21/02 主分类号 C30B19/02
代理机构 Cermak Nakajima & McGowan LLP 代理人 Cermak Nakajima & McGowan LLP ;Nakajima Tomoko
主权项 1. A method of producing a crystal of a nitride of a group 13 element in a melt by flux method, the method comprising the step of: heating a composition comprising a material for said group 13 element, a material for at least one of an alkali metal and an alkaline earth metal and a liquid material for germanium to generate said melt, wherein said liquid material for germanium is liquid at 25° C. under atmospheric pressure.
地址 Aichi-Prefecture JP