发明名称 Additives to improve the performance of a precursor source for cobalt deposition
摘要 Methods of forming cobalt films utilizing a cobalt precursor comprising an additive are described. Those methods may include adding an additive to a cobalt precursor, wherein the cobalt precursor is located in an ampoule that is coupled with a deposition tool, and then forming a cobalt film using the cobalt precursor comprising the additive. Non-volatile decomposition products of the cobalt precursor are solubilized in the ampoule.
申请公布号 US9090964(B2) 申请公布日期 2015.07.28
申请号 US201314134087 申请日期 2013.12.19
申请人 Intel Corporation 发明人 Blackwell James M.;Bergstrom Daniel B.;Clendenning Scott B.;Romero Patricio E.
分类号 C23C16/08;C23C16/16;C23C16/18;C23C16/06 主分类号 C23C16/08
代理机构 Blakey, Sokoloff, Taylor & Zafman LLP 代理人 Blakey, Sokoloff, Taylor & Zafman LLP
主权项 1. A method of forming a cobalt thin film comprising: adding an additive to a cobalt precursor, wherein the cobalt precursor is located in an ampoule of a deposition tool; and forming a cobalt film using the cobalt precursor comprising the additive, wherein non-volatile decomposition products of the cobalt precursor are solubilized in the ampoule.
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