发明名称 |
Additives to improve the performance of a precursor source for cobalt deposition |
摘要 |
Methods of forming cobalt films utilizing a cobalt precursor comprising an additive are described. Those methods may include adding an additive to a cobalt precursor, wherein the cobalt precursor is located in an ampoule that is coupled with a deposition tool, and then forming a cobalt film using the cobalt precursor comprising the additive. Non-volatile decomposition products of the cobalt precursor are solubilized in the ampoule. |
申请公布号 |
US9090964(B2) |
申请公布日期 |
2015.07.28 |
申请号 |
US201314134087 |
申请日期 |
2013.12.19 |
申请人 |
Intel Corporation |
发明人 |
Blackwell James M.;Bergstrom Daniel B.;Clendenning Scott B.;Romero Patricio E. |
分类号 |
C23C16/08;C23C16/16;C23C16/18;C23C16/06 |
主分类号 |
C23C16/08 |
代理机构 |
Blakey, Sokoloff, Taylor & Zafman LLP |
代理人 |
Blakey, Sokoloff, Taylor & Zafman LLP |
主权项 |
1. A method of forming a cobalt thin film comprising:
adding an additive to a cobalt precursor, wherein the cobalt precursor is located in an ampoule of a deposition tool; and forming a cobalt film using the cobalt precursor comprising the additive, wherein non-volatile decomposition products of the cobalt precursor are solubilized in the ampoule. |
地址 |
Santa Clara CA US |