| 发明名称 |
Methods and structures for reducing heat exposure of thermally sensitive semiconductor devices |
| 摘要 |
A semiconductor device comprising a substrate, a power bus, a heat source circuit, a heat sensitive circuit, and a plurality of electrically and thermally conductive through-silicon-vias (TSVs) in the substrate. The TSVs are electrically coupled to the power bus and positioned between the heat source circuit and the heat sensitive circuit to absorb heat from the heat source circuit. |
| 申请公布号 |
US9093429(B2) |
申请公布日期 |
2015.07.28 |
| 申请号 |
US201213535028 |
申请日期 |
2012.06.27 |
| 申请人 |
Freescale Semiconductor, Inc. |
发明人 |
McShane Michael B.;Hess Kevin J.;Pelley Perry H.;Stephens Tab A. |
| 分类号 |
H01L23/34;H01L23/52;H01L23/48;H01L23/13;H01L23/36;H01L23/367;H01L23/31;H01L23/00 |
主分类号 |
H01L23/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate; a power bus; a heat source circuit; a heat sensitive circuit; a plurality of electrically and thermally conductive through-silicon-vias (TSVs) in the substrate, wherein the conductive TSVs are electrically coupled to the power bus, and the conductive TSVs are positioned between the heat source circuit and the heat sensitive circuit. |
| 地址 |
Austin TX US |
