Rotation plus vibration magnet for magnetron sputtering apparatus

摘要

In some embodiments, the present disclosure relates to a plasma processing system comprising a magnetron configured to provide a symmetric magnetic track through a combination of vibrational and rotational motion. The disclosed magnetron comprises a magnetic element configured to generate a magnetic field. The magnetic element is attached to an elastic element connected between the magnetic element and a rotational shaft configured to rotate magnetic element about a center of the sputtering target. The elastic element is configured to vary its length during rotation of the magnetic element to change the radial distance between the rotational shaft and the magnetic element. The resulting magnetic track enables concurrent motion of the magnetic element in both an angular direction and a radial direction. Such motion enables a symmetric magnetic track that provides good wafer uniformity and a short deposition time.

主权项

1. A physical vapor deposition system, comprising:
a processing chamber configured to house a workpiece; a sputtering target located within the processing chamber; a magnetic element positioned on a backside of the sputtering target and configured to generate a magnetic field that operates upon ions within the processing chamber; a first ambulatory element configured to rotate around a pivot point to move the magnetic element in an angular direction around an axis of rotation; a second ambulatory element configured to linearly oscillate the magnetic element in a radial direction concurrent to movement in the angular direction; and a secondary outside magnet laterally positioned around a perimeter of the sputtering target at a location vertically offset from the sputtering target, and having a bottom surface that faces the backside of the sputtering target, wherein the secondary outside magnetic element is configured to generate a secondary magnetic field that acts upon the magnetic element with a repulsive force.