| 摘要 |
The present disclosure provides a semiconductor structure includes a semiconductor layer having a first surface, and an interlayer dielectric (ILD) defining a metal gate over the first surface of the semiconductor layer. The metal gate includes a high-k dielectric layer, a barrier layer, and a work function metal layer. The thickness of a first portion of the barrier layer at the sidewall of the metal gate is substantially thinner than that of the barrier layer at the bottom of the metal gate. The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a metal gate trench in an ILD, forming a barrier layer in a bottom and sidewall of the metal gate trench, removing a first portion of the barrier layer at the sidewall of the metal gate trench, and forming a work function metal layer aligned to the barrier layer. |
