| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor having a new multi-gate structure with improved operating characteristic and reliability.SOLUTION: A transistor having a multi-gate structure comprises: at least two gate electrodes; and a semiconductor layer having at least two channel forming areas connected in series, a source area, a drain area, and a high concentration impurity area. In the transistor, the channel length of the channel forming area adjacent to the source area side is larger than the channel length of the channel forming area adjacent to the drain area side. |
