| 摘要 |
PROBLEM TO BE SOLVED: To provide a system capable of manufacturing an EUV exposure mask including defects in a region of an absorber pattern, and to provide a method of the same.SOLUTION: A method of manufacturing an exposure mask includes: a step of measuring and recording defective position data for each EUV exposure mask blank, that indicates positions of at least one or more defects generated at each of a plurality of EUV exposure mask blanks; a step of inputting pattern data in which a graphic pattern as a drawing target is defined; and a step of retrieving an EUV exposure mask blank by which the graphic pattern can be arranged so that the number of defects not arranged in a light-shielding region in a case where the graphic pattern is drawn becomes a threshold or less, by using the defective position data for each EUV exposure mask blank, among the plurality of EUV exposure mask blanks, on the basis of an arrangement position of the graphic pattern defined in the pattern data. |
