| 摘要 |
PROBLEM TO BE SOLVED: To enable inhibition of variation in on-resistance and reduction in current loss.SOLUTION: In a semiconductor device, a field plate 14 is arranged on a LOCOS oxide film 3 and between a gate electrode 11 and a drain electrode 12 and electrically connected to the drain electrode 12 to fix the field plate 14 at drain potential. By doing this, a negatively-charged mobile ion in the field plate 14 can be drawn through a drain wiring layer 16a and the like thereby to inhibit a negative charge from being charged in the field plate 14. Accordingly, an influence on a current path between a source-drain can be reduced to inhibit variation in on-resistance. Further, the field plate 14 is fixed at the drain potential and has a structure not to cause a potential difference between both ends of the field plate 14, thereby inhibiting a current flow based on the potential difference between both ends of the field plate. Accordingly, a current loss can be reduced. |
