发明名称 SEMICONDUCTOR SUBSTRATE WITH PASSIVATION FILM AND METHOD OF MANUFACTURING THE SAME, AND SOLAR BATTERY ELEMENT USING THE SAME AND METHOD OF MANUFACTURING THE SOLAR BATTERY CELL ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor substrate with a passivation film capable of forming a semiconductor substrate passivation film having an excellent passivation effect in a desired shape by a simple method, and to provide a semiconductor substrate with a passivation film obtained by the manufacturing method, and a solar battery element using the same and a method of manufacturing the solar battery element.SOLUTION: A method of manufacturing a semiconductor substrate with a passivation film includes: a step of applying a passivation film formation composition containing an organic aluminum compound represented by general formula (I), on a semiconductor substrate to form a passivation film formation composition layer; and a heat treatment step of performing heat treatment of the passivation film formation composition layer under such an atmosphere that an oxygen concentration is 40 vol.% or less and forming a passivation film.
申请公布号 JP2015135858(A) 申请公布日期 2015.07.27
申请号 JP20140005815 申请日期 2014.01.16
申请人 HITACHI CHEMICAL CO LTD 发明人 KODAMA SHUNSUKE;YOSHIDA MASATO;NOJIRI TAKESHI;KURATA YASUSHI;TANAKA TORU;MOMOZAKI AYA;MORISHITA MASATOSHI;HAYASAKA TAKESHI
分类号 H01L21/316;H01L21/288;H01L21/768;H01L31/04 主分类号 H01L21/316
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