发明名称 |
SEMICONDUCTOR SUBSTRATE WITH PASSIVATION FILM AND METHOD OF MANUFACTURING THE SAME, AND SOLAR BATTERY ELEMENT USING THE SAME AND METHOD OF MANUFACTURING THE SOLAR BATTERY CELL ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor substrate with a passivation film capable of forming a semiconductor substrate passivation film having an excellent passivation effect in a desired shape by a simple method, and to provide a semiconductor substrate with a passivation film obtained by the manufacturing method, and a solar battery element using the same and a method of manufacturing the solar battery element.SOLUTION: A method of manufacturing a semiconductor substrate with a passivation film includes: a step of applying a passivation film formation composition containing an organic aluminum compound represented by general formula (I), on a semiconductor substrate to form a passivation film formation composition layer; and a heat treatment step of performing heat treatment of the passivation film formation composition layer under such an atmosphere that an oxygen concentration is 40 vol.% or less and forming a passivation film. |
申请公布号 |
JP2015135858(A) |
申请公布日期 |
2015.07.27 |
申请号 |
JP20140005815 |
申请日期 |
2014.01.16 |
申请人 |
HITACHI CHEMICAL CO LTD |
发明人 |
KODAMA SHUNSUKE;YOSHIDA MASATO;NOJIRI TAKESHI;KURATA YASUSHI;TANAKA TORU;MOMOZAKI AYA;MORISHITA MASATOSHI;HAYASAKA TAKESHI |
分类号 |
H01L21/316;H01L21/288;H01L21/768;H01L31/04 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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