SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having achieved a miniaturization while reducing a failure, or provide a semiconductor device having achieved the miniaturization while retaining excellent characteristics.SOLUTION: A semiconductor device includes: source wiring and drain wiring respectively including a first conductive layer and a second conductive layer having film thickness smaller than that of the first conductive layer; an insulating layer having an opening and provided on the source wiring and the drain wiring; an oxide semiconductor layer provided on the insulating layer and in contact with a part of the second conductive layer of the source wiring or the drain wiring at the opening; a gate insulating layer provided on the oxide semiconductor layer; and a gate electrode provided on the gate insulating layer.