| 发明名称 |
MAGNETORESISTIVE RANDOM ACCESS DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
<p>A magnetoresistive random access memory device includes a fixed film pattern, a first tunnel barrier film pattern, a free film pattern, a second tunnel barrier film pattern, and a capping film pattern which are successively formed on a substrate. The second tunnel barrier film pattern includes metal oxide. The capping film pattern includes metal whose oxide film forming energy is smaller than the oxide film forming energy of tantalum.</p> |
| 申请公布号 |
KR20150085911(A) |
申请公布日期 |
2015.07.27 |
| 申请号 |
KR20140005869 |
申请日期 |
2014.01.17 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JOON MYOUNG;PARK, HONG LAE;KIM, SANG YONG;LIM, WOO CHANG |
| 分类号 |
G11C11/15 |
主分类号 |
G11C11/15 |
| 代理机构 |
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代理人 |
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