NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile memory device in which further miniaturization of a nonvolatile memory element can be achieved while suppressing oxidation of a contact plug.SOLUTION: A nonvolatile memory device includes: an insulating layer 11; oxygen diffusion prevention layers 12 formed on the insulating layer 11; contact plugs 13 provided to penetrate through each oxygen diffusion prevention layer 12 and at least a part of the insulating layer 11; and resistance-variable elements 10 each covering the whole area of each contact plug 13 exposed on surfaces of the oxygen diffusion prevention layers 12 and electrically connected to each contact plug 13. Each resistance-variable element 10 includes a resistance-variable layer 18 having a resistance value changing reversibly on the basis of an electrical signal provided between a lower electrode 17 and an upper electrode 19. A plurality of the resistance-variable elements 10 and a plurality of the contact plugs 13 are provided. Each oxygen diffusion prevention layer 12 is formed separately so as to correspond to each contact plug arranged for each resistance-variable element, at the interface between the insulating layer 11 and each resistance-variable element 10.