发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a technology that is used to reduce hillocks occurring in a wiring pattern.SOLUTION: A manufacturing method of a semiconductor device includes: a formation step where a wiring pattern made of copper is formed; a heat treatment step where heat treatment is performed to the wiring pattern in an atmosphere of an inactive gas; and a step where plasma treatment is performed to the wiring pattern using a reduction gas after the heat treatment step. A temperature in the plasma treatment is lower than or equal to a temperature in the heat treatment.</p>
申请公布号 JP2015135948(A) 申请公布日期 2015.07.27
申请号 JP20140228330 申请日期 2014.11.10
申请人 CANON INC 发明人 KONO AKIHIRO;SANO HIROAKI
分类号 H01L21/768;H01L23/522;H01L27/14 主分类号 H01L21/768
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