发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a technology that is used to reduce hillocks occurring in a wiring pattern.SOLUTION: A manufacturing method of a semiconductor device includes: a formation step where a wiring pattern made of copper is formed; a heat treatment step where heat treatment is performed to the wiring pattern in an atmosphere of an inactive gas; and a step where plasma treatment is performed to the wiring pattern using a reduction gas after the heat treatment step. A temperature in the plasma treatment is lower than or equal to a temperature in the heat treatment.</p> |
申请公布号 |
JP2015135948(A) |
申请公布日期 |
2015.07.27 |
申请号 |
JP20140228330 |
申请日期 |
2014.11.10 |
申请人 |
CANON INC |
发明人 |
KONO AKIHIRO;SANO HIROAKI |
分类号 |
H01L21/768;H01L23/522;H01L27/14 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|