TUNNEL FIELD-EFFECT TRANSISTOR

摘要

The present invention relates to a tunnel field-effect transistor device (10) comprising a semiconductor substrate (11) and a pin structure (20). The pin structure includes a channel area (21) and a source area (22) placed on the channel area. The channel area is in contact with a drain area (12) which is a conductive type different from the source area. A gate interface part (30) of the source area of a pocket layer (31) is coated. The TFET device comprises: the pocket layer (31) in contact with at least part of the channel area; a gate dielectric layer (32) to cover the pocket layer; and a gate electrode (33) to cover the gate dielectric layer. The gate interface part of the source part includes at least three coplanar surface segments (41, 42, 43, 44). The present invention relates to a method for manufacturing the TFET device.