发明名称 CAPTEUR D'IMAGE A MATRICE D'ECHANTILLONNEURS
摘要 <p>The invention relates to an image sensor with N rows of P active photosensitive pixels using MOS technology. The sensor comprises digitizing circuits organized with N rows of P processing circuits, each processing circuit of row rank i and of column rank j comprising a respective sampler for carrying out a correlated double sampling of the signals present on a column conductor of rank j and corresponding to the observation of an image dot over the same integration time for all the rows, and an analog-digital conversion means in order to supply digital values of the analog signals sampled. The sensor is particularly suited to operating in TDI (image scanning and integration) mode.</p>
申请公布号 FR2959901(B1) 申请公布日期 2015.07.24
申请号 FR20100001911 申请日期 2010.05.04
申请人 E2V SEMICONDUCTORS 发明人 BUGNET HENRI;TATAT ALEXANDRE
分类号 H04N5/335;H04N5/353;H04N5/363 主分类号 H04N5/335
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