发明名称 CIRCUIT INTEGRE PHOTONIQUE ET PROCEDE DE FABRICATION
摘要 <p>A photonic integrated circuit may include a silicon layer including a waveguide and at least one other photonic component. The photonic integrated circuit may also include a first insulating region arranged above a first side of the silicon layer and encapsulating at least one metallization level, a second insulating region arranged above a second side of the silicon layer and encapsulating at least one gain medium of a laser source optically coupled to the waveguide.</p>
申请公布号 FR3007589(B1) 申请公布日期 2015.07.24
申请号 FR20130055991 申请日期 2013.06.24
申请人 STMICROELECTRONICS (CROLLES 2) SAS;STMICROELECTRONICS SA 发明人 CHANTRE ALAIN;CREMER SEBASTIEN
分类号 H01S5/026 主分类号 H01S5/026
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