发明名称 |
CIRCUIT INTEGRE PHOTONIQUE ET PROCEDE DE FABRICATION |
摘要 |
<p>A photonic integrated circuit may include a silicon layer including a waveguide and at least one other photonic component. The photonic integrated circuit may also include a first insulating region arranged above a first side of the silicon layer and encapsulating at least one metallization level, a second insulating region arranged above a second side of the silicon layer and encapsulating at least one gain medium of a laser source optically coupled to the waveguide.</p> |
申请公布号 |
FR3007589(B1) |
申请公布日期 |
2015.07.24 |
申请号 |
FR20130055991 |
申请日期 |
2013.06.24 |
申请人 |
STMICROELECTRONICS (CROLLES 2) SAS;STMICROELECTRONICS SA |
发明人 |
CHANTRE ALAIN;CREMER SEBASTIEN |
分类号 |
H01S5/026 |
主分类号 |
H01S5/026 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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