METHOD AND SYSTEM FOR MANUFACTURING EXPOSURE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

The present invention relates to a method for manufacturing an exposure mask comprising: measuring and recording defect position data for each extreme ultra violet (EUV) exposure mask blank indicating a position of at least one defect generated in a plurality of EUV exposure mask blanks; inputting pattern data wherein a figure pattern to be drawn is defined; searching the EUV exposure mask blank to locate the figure pattern in order that the number of defects not placed on a light-shielding area is less than a threshold value when the figure pattern is drawn by using defect position data for each EUV exposure mask blank among a plurality of EUV exposure mask blanks based on a position of arranging a figure pattern defined by pattern data; and drawing the figure pattern in order that the number of defects not placed on the light-shielding area is less than the threshold value in the searched EUV exposure mask blank by using a charged particle beam.