| 发明名称 |
FILM BULK ACOUSTIC WAVE RESONATOR (FBAR) HAVING STRESS-RELIEF |
| 摘要 |
An acoustic resonator structure comprises: a substrate having a cavity, which has a plurality of sides; a first electrode disposed over the cavity; a piezoelectric layer disposed over a portion of the first electrode and extending over at least one of the sides; and a second electrode disposed over the piezoelectric layer, an overlap of the first electrode, the piezoelectric layer and the second electrode forming an active area of the FBAR. The active area of the FBAR is completely suspended over the cavity. |
| 申请公布号 |
US2015207489(A1) |
申请公布日期 |
2015.07.23 |
| 申请号 |
US201414159518 |
申请日期 |
2014.01.21 |
| 申请人 |
Avago Technologies General IP (Singapore) Pte. Ltd. |
发明人 |
Bi Frank;Small Martha K.;Sridaran Suresh;Ruby Richard C. |
| 分类号 |
H03H9/17 |
主分类号 |
H03H9/17 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A film bulk acoustic resonator (FBAR) structure, comprising:
a substrate comprising a cavity having a plurality of sides; a first electrode disposed over the cavity, the first electrode extending over at least one but not all of the sides of the cavity; a piezoelectric layer disposed over at least a portion of the first electrode, and extending over the at least one of the sides having the first electrode extending thereover, and a second electrode disposed over the piezoelectric layer, a contacting overlap of the first electrode, the piezoelectric layer and the second electrode forming an active area of the FBAR. |
| 地址 |
Singapore SG |
