| 发明名称 |
Double Patterning Method Of Forming Semiconductor Active Areas And Isolation Regions |
| 摘要 |
A method of forming active areas and isolation regions in a semiconductor substrate using a double patterning process. The method include forming a first material on the substrate surface, forming a second material on the first material, forming a plurality of first trenches into the second material wherein the plurality of first trenches are parallel to each other, forming a second trench into the second material wherein the second trench is perpendicular to and crosses the plurality of first trenches in a central region of the substrate, filling the first and second trenches with a third material, removing the second material to form third trenches in the third material that are parallel to each other and do not extend through the central region of the substrate, and extending the third trenches through the first material and into the substrate. |
| 申请公布号 |
US2015206788(A1) |
申请公布日期 |
2015.07.23 |
| 申请号 |
US201414162309 |
申请日期 |
2014.01.23 |
| 申请人 |
Silicon Storage Technology, Inc. |
发明人 |
Wang Jeng-Wei;Su Chien-Sheng |
| 分类号 |
H01L21/762;H01L21/308 |
主分类号 |
H01L21/762 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of processing a semiconductor substrate, comprising:
forming a first material on a substrate surface; forming a second material on the first material; forming a plurality of first trenches into the second material, wherein the plurality of first trenches are parallel to each other; forming a second trench into the second material, wherein the second trench is perpendicular to and crosses the plurality of first trenches in a central region of the substrate; filling the first and second trenches with a third material; removing the second material to form third trenches in the third material that are parallel to each other and do not extend through the central region of the substrate; and extending the third trenches through the first material and into the substrate. |
| 地址 |
San Jose CA US |
