| 发明名称 |
THREE-DIMENSIONAL WORDLINE SHARING MEMORY |
| 摘要 |
A three dimensional (3D) circuit includes a first layer including at least a first memory cell, a second layer including at least a second memory cell, and a wordline shared by the first memory cell and the second memory cell. The first and second memory cells can be adjacent memory cells or bit cells coupled to different bit lines. |
| 申请公布号 |
US2015206555(A1) |
申请公布日期 |
2015.07.23 |
| 申请号 |
US201414159464 |
申请日期 |
2014.01.21 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
YANG Hao-I;CHEN Yi-Tzu;CHANG Cheng-Jen;LIN Geng-Cing;HU Yu-Hao |
| 分类号 |
G11C5/02;G11C5/06 |
主分类号 |
G11C5/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A three dimensional (3D) circuit, comprising:
a first layer including at least a first memory cell; a second layer including at least a second memory cell, the second layer disposed in a vertical stack with the first layer; and a wordline shared by the first memory cell and the second memory cell. |
| 地址 |
Hsin-Chu TW |
