发明名称 |
SELECTIVE METAL/METAL OXIDE ETCH PROCESS |
摘要 |
The present invention provides a process for selectively etching molybdenum or titanium relative to a oxide semiconductor film, including providing a substrate comprising a layer of oxide semiconductor and a layer comprising molybdenum or titanium on the layer of oxide semiconductor; preparing the substrate by applying a photoresist layer over the layer comprising molybdenum or titanium, and then patterning and developing the photoresist layer to form an exposed portion of the layer comprising molybdenum or titanium; providing a composition comprising ammonia or ammonium hydroxide, a quaternary ammonium hydroxide and a peroxide; and applying the composition to the exposed portion for a time sufficient to etch and remove the exposed portion of the layer comprising molybdenum or titanium, wherein the etching selectively removes the molybdenum or titanium relative to the oxide semiconductor. |
申请公布号 |
WO2015108842(A1) |
申请公布日期 |
2015.07.23 |
申请号 |
WO2015US11130 |
申请日期 |
2015.01.13 |
申请人 |
SACHEM, INC. |
发明人 |
VERMEULEN, PAUL;ALLEN, CRAIG |
分类号 |
C23F1/34;C23F1/36;C23F1/38;H01L21/3213 |
主分类号 |
C23F1/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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