| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, a semiconductor device, and a system of manufacturing a semiconductor device, capable of reducing variation in a differential value between a photoluminescence wavelength of an optical modulator part and an oscillation wavelength of a laser part.SOLUTION: A method of manufacturing a semiconductor device includes: a first step of forming on a substrate a lower light confinement layer, a light absorption layer, and an upper light confinement layer, and then, removing a part of these layers to form an optical modulator part; a second step of forming a laser part having a diffraction grating at a part where no optical modulator part is formed, of the substrate; a step of forming a diffusion suppression layer for suppressing diffusion of dopant, on the upper light confinement layer; and a third step of forming a contact layer on the laser part and the diffusion suppression layer. A type of a dopant of the contact layer and a type of a dopant of the upper light confinement layer are made accord with each other. |
