| 摘要 |
Diodes and methods of manufacturing diodes are disclosed. The diodes may include a cathode assembly and an anode assembly having an anode electrode, a gate electrode layer under the anode electrode, a gate oxide layer under the gate electrode layer, at least one P− body region under the gate oxide layer, and at least one trench that extends through the gate electrode layer, the gate oxide layer, and the at least one P− body region to the cathode assembly. The at least one trench may include a lower portion having (1) a bottom and a plurality of sidewalls defining a bottom volume and having an insulating layer and (2) a conductive material that is disposed within the bottom volume and that is in electrical communication with the anode electrode. The anode electrode may contact extend through the at least one trench to the conductive material. |
| 主权项 |
1. A diode, comprising:
a cathode assembly including:
a cathode electrode,a N+ substrate layer over the cathode electrode, anda N− bulk layer over the N+ substrate layer; and an anode assembly including:
an anode electrode,a gate electrode layer under the anode electrode, the gate electrode layer being shorted to the anode electrode,a gate oxide layer under the gate electrode layer,at least one P− body region under the gate oxide layer, andat least one trench that extends through the gate electrode layer, the gate oxide layer, and the at least one P− body region to the N− bulk layer, wherein the at least one trench includes an upper portion and a lower portion, the lower portion having a bottom and a plurality of sidewalls defining a bottom volume, the bottom and the plurality of sidewalls having an insulating layer, the lower portion further having a conductive material that is disposed within the bottom volume and that is in electrical communication with the anode electrode, the insulating layer being configured to electrically insulate the conductive material from the N-bulk layer, and wherein the anode electrode extends through the upper portion of the at least one trench to the conductive material. |
