SEMICONDUCTOR DEVICE HAVING A NANOTUBE LAYER AND METHOD FOR FORMING

摘要

A method of forming a semiconductor device includes forming a first conductive layer over the substrate. A dielectric layer, having a first opening, is formed over the first conductive layer. A seed layer is deposited over the first dielectric layer and in the first opening. A layer is formed of conductive nanotubes from the seed layer over the first dielectric layer and over the first opening. A second dielectric is formed over the layer of conductive nanotubes. An opening is formed in the second dielectric layer over the first opening. Conductive material is deposited in the second opening.

主权项

1. A semiconductor device, comprising:
a substrate; a conductive layer over the substrate; a first dielectric layer over the conductive layer, the dielectric layer having a first opening; a first plurality of conductive nanotubes over the dielectric layer; a second plurality of conductive nanotubes over the first opening in the dielectric layer; a second dielectric layer above the first plurality of conductive nanotubes and the second plurality of conductive nanotubes, the second dielectric layer having a second opening that is over the second plurality of conductive nanotubes; and a metal material in the second opening to form electrical contact between the conductive layer and the metal material through the second plurality of conductive nanotubes.