发明名称 POLYMER GRAFTING FOR ENHANCED DIELECTRIC AND INTERCONNECT MATERIAL ADHESION
摘要 A microelectronic structure may include an interconnect structure, an amine functional reactive polymer layer grafted onto the interconnect structure, and a dielectric layer on the amine functional reactive polymer layer, wherein the dielectric layer is bonded to the polymer layer with an amine bond. In one embodiment, the interconnect structure may be fabricated from a copper containing material. In a further embodiment, the dielectric layer may comprise an oxygen functional reactive dielectric layer, such as an epoxy dielectric layer. In one method of fabricating the microelectronic structure, the amine functional reactive polymer layer may be grafted onto the interconnect structure by an initiated chemical vapor deposition process.
申请公布号 US2015206793(A1) 申请公布日期 2015.07.23
申请号 US201414161998 申请日期 2014.01.23
申请人 Subramani Chandramouleeswaran;Tanikella Ravindra V. 发明人 Subramani Chandramouleeswaran;Tanikella Ravindra V.
分类号 H01L21/768;H01L23/482;H01L23/50 主分类号 H01L21/768
代理机构 代理人
主权项 1. A microelectronic structure, comprising: an interconnect structure; an amine functional reactive polymer layer grafted onto the interconnect structure; and a dielectric layer on the amine functional reactive polymer layer, wherein the dielectric layer is bonded to the polymer layer with an amine bond.
地址 Chandler AZ US