| 发明名称 |
POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME |
| 摘要 |
A positive type resist composition for use in liquid immersion exposure comprises: (A) a resin having a monocyclic or polycyclic cycloaliphatic hydrocarbon structure, the resin increasing its solubility in an alkali developer by an action of acid; (B) a compound generating acid upon irradiation with one of an actinic ray and a radiation; (C) an alkali soluble compound having an alkyl group of 5 or more carbon atoms; and (D) a solvent. |
| 申请公布号 |
US2015205205(A1) |
申请公布日期 |
2015.07.23 |
| 申请号 |
US201414449415 |
申请日期 |
2014.08.01 |
| 申请人 |
FUJIFILM Corporation |
发明人 |
KOBAYASHI Hiromi;INABE Haruki |
| 分类号 |
G03F7/039;G03F7/20 |
主分类号 |
G03F7/039 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A resist composition for ArF exposure, comprising;
(A) a resin having a monocyclic or polycyclic cycloaliphatic hydrocarbon structure, the resin increasing its solubility in an alkali developer by an action of acid; (B) a compound generating acid upon irradiation with one of an actinic ray and a radiation; (C) a resin containing an alkyl group having 2 or more carbon atoms; and (D) a solvent; andwherein the structure of resin (A) and the structure of resin (C) are not in the same compound. |
| 地址 |
Tokyo JP |
