| 摘要 |
Provided are a conductive paste which does not contain an injurious material, such as lead, arsenic, tellurium, or antimony, and which can not only achieve bonding at a relatively low temperature (for example, at 370 °C or lower) but also maintain the bond strength even at a relatively high temperature (for example, at 300 to 360 °C), and a method for producing a semiconductor device using the conductive paste. A conductive paste comprising (A) conductive particles, (B) a glass frit containing substantially no lead, arsenic, tellurium, and antimony, and (C) a solvent, wherein the glass frit (B) has a remelting temperature of 320 to 360 °C, wherein the remelting temperature is indicated by the peak top of at least one endothermic peak having an endotherm of 20 J/g or more in a DSC curve as measured by a differential scanning calorimeter. The conductive paste preferably further comprises (D) an oxide selected from the group consisting of tin oxide, zinc oxide, indium oxide, and copper oxide. Glass frit (B) preferably comprises (B-1) Ag2O, (B-2) V2O5, and (B-3) MoO3. |
