发明名称 SOLID STATE IMAGE SENSOR, MANUFACTURING METHOD THEREOF AND ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To prevent color mixture or sensibility reduction in pixels for phase difference detection.SOLUTION: A phase difference detection pixel 81 is a pixel for phase difference detection. A first imaging pixel 82 adjacent to the phase difference detection pixel 81 is an imaging pixel. A second imaging pixel 83 is an imaging pixel other than the first imaging pixel 82. The area of a color filter 94 of the first imaging pixel 82 is smaller than the area of a color filter 97 of the second imaging pixel 83. The solid state image sensor is applicable to, for example, a CMOS (Complementary Metal-Oxide Semiconductor) image sensor etc.
申请公布号 JP2015133469(A) 申请公布日期 2015.07.23
申请号 JP20140109412 申请日期 2014.05.27
申请人 SONY CORP 发明人 TAYANAKA HIROSHI;INOUE YUJI;NAKADA SEISHI
分类号 H01L27/14;H04N5/369;H04N9/07 主分类号 H01L27/14
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