METAL GATE STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

The present disclosure provides a semiconductor structure includes a semiconductor layer having a first surface, and an interlayer dielectric (ILD) defining a metal gate over the first surface of the semiconductor layer. The metal gate includes a high-k dielectric layer, a barrier layer, and a work function metal layer. A thickness of a first portion of the barrier layer at the sidewall of the metal gate is substantially thinner than a thickness of the barrier layer at the bottom of the metal gate. The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a metal gate trench in an ILD, forming a barrier layer in a bottom and a sidewall of the metal gate trench, removing a first portion of the barrier layer at the sidewall of the metal gate trench, and forming a work function metal layer conforming to the barrier layer.

主权项

1. A semiconductor structure, comprising:
a semiconductor layer having a first surface; and an interlayer dielectric (ILD) defining a metal gate over the first surface of the semiconductor layer, wherein the metal gate comprises:
a high-k dielectric layer conforming to a bottom and a sidewall of the metal gate;a barrier layer conforming to the high-k dielectric layer; anda work function metal layer conforming to the barrier layer and the high-k dielectric layer,wherein a thickness of a first portion of the barrier layer at the sidewall of the metal gate is substantially thinner than a thickness of the barrier layer at the bottom of the metal gate, andwherein the work function metal layer outlines the first portion of the barrier layer.