| 发明名称 |
SEMICONDUCTOR DEVICE, TRANSISTOR HAVING DOPED SEED LAYER AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device includes a substrate, and a seed layer over the substrate, wherein the seed layer comprises carbon dopants. The semiconductor device further includes a channel layer over the seed layer, and an active layer over the channel layer, wherein the active layer has a band gap discontinuity with the channel layer. A method of making a transistor includes forming a seed layer over a substrate, and doping the seed layer, wherein doping the seed layer comprises introducing carbon dopants into the seed layer. The method further includes forming a channel layer over the seed layer, and forming an active layer over the channel layer, wherein the active layer has a band gap discontinuity with the channel layer. |
| 申请公布号 |
US2015206962(A1) |
申请公布日期 |
2015.07.23 |
| 申请号 |
US201414158157 |
申请日期 |
2014.01.17 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN Chi-Ming;LIU Po-Chun;YU Chung-Yi;TSAI Chia-Shiung;LEE Ru-Liang |
| 分类号 |
H01L29/778;H01L21/02;H01L29/66;H01L21/265;H01L29/20;H01L29/205 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a substrate; a seed layer over the substrate, wherein the seed layer comprises carbon dopants; a channel layer over the seed layer; and an active layer over the channel layer, wherein the active layer has a band gap discontinuity with the channel layer. |
| 地址 |
Hsinchu TW |
