TRANSISTORS AND FABRICATION METHODS THEREOF

摘要

A method is provided for fabricating transistors. The method includes providing a substrate; and forming at least one dummy gate structure having a dummy gate dielectric layer and a dummy gate electrode layer on the substrate. The method also includes forming a dielectric film on the substrate and the dummy gate structure; and performing a thermal annealing process onto the dielectric film to increase the density of the interlayer dielectric film. Further, the method includes planarizing the dielectric film having the increased density until the top surface of the dummy gate structure is exposed; and forming a dense layer having an increased density on the dielectric film having the increased density. Further, the method also includes removing the dummy gate dielectric layer and the dummy gate electrode layer to form an opening; and forming a gate dielectric layer and a gate electrode layer sequentially in the opening.

主权项

1. A method for fabricating transistors, comprising:
providing a substrate; forming at least one dummy gate structure having a dummy gate dielectric layer formed on the substrate and a dummy gate electrode layer formed on the dummy gate dielectric layer on the substrate; forming a dielectric film on a surface of the substrate and a top surface of the dummy gate structure; increasing the density of the dielectric film by performing a thermal annealing process onto the dielectric film; planarizing the dielectric film having the increased density until the top surface of the dummy gate structure is exposed; forming a dense layer having a increased density on the dielectric film; removing the dummy gate dielectric layer and the dummy gate electrode layer to form an opening; and forming a gate dielectric layer and a gate electrode layer sequentially in the opening.