发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a gate structure formed on a substrate, a source/drain extension formed at one side of the gate structure while not being formed at the other side of the gate structure, and doped with a first type impurity, a halo region formed at one side of the gate structure while not being formed at the other side of the gate structure, and doped with a second type impurity different from the first type impurity, a first source/drain region formed at one side of the gate structure and doped with the first type impurity, and a second source/drain region formed at the other side of the gate structure and doped with the first type impurity. |
申请公布号 |
US2015206874(A1) |
申请公布日期 |
2015.07.23 |
申请号 |
US201414327858 |
申请日期 |
2014.07.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SON Seung-Hun |
分类号 |
H01L27/088;H01L29/78;H01L29/08 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
a gate structure on a substrate; a source/drain extension at a first side of the gate structure and doped with a first type impurity; a halo region at the first side of the gate structure and doped with a second type impurity different from the first type impurity; a first source/drain region at the first side of the gate structure and doped with the first type impurity; and a second source/drain region formed at a second side of the gate structure and doped with the first type impurity. |
地址 |
Suwon-si KR |