发明名称 METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE
摘要 Methods and apparatus for processing a substrate are provided. In some embodiments, a method of processing a substrate disposed in a process chamber includes performing a process on a substrate disposed in a process chamber having a substrate support ring configured to support the substrate and a reflector plate disposed proximate a back side of the substrate; providing a first gas comprising one of an oxygen containing gas or a nitrogen containing gas to a back side of the substrate via one or more through holes disposed in the reflector plate while performing the process on the substrate; and maintaining the process chamber at a first pressure proximate a top surface of the substrate and at a second pressure proximate the bottom surface of the substrate, wherein the first pressure is greater than the second pressure sufficiently to prevent dislodgement of the substrate from the substrate support ring during processing.
申请公布号 US2015206721(A1) 申请公布日期 2015.07.23
申请号 US201514658732 申请日期 2015.03.16
申请人 APPLIED MATERIALS, INC. 发明人 ROGERS MATTHEW;RIPLEY MARTIN
分类号 H01J37/32;C23C16/00 主分类号 H01J37/32
代理机构 代理人
主权项 1. An apparatus for processing a substrate, comprising: a process chamber having a substrate support ring configured to support a substrate and a reflector plate disposed proximate a back side of the substrate, the reflector plate having a plurality of through holes; wherein at least one of the plurality of through holes disposed in the reflector plate is an inlet to provide a first gas to an area proximate a back surface of the substrate; and wherein at least one of the plurality of through holes disposed in the reflector plate is an outlet to create a flow of the gases away from the back surface of the substrate.
地址 Santa Clara CA US