| 主权项 |
1. A method of fabricating a semiconductor structure comprising:
forming a plurality of first trenches in a semiconductor substrate, forming at least a second trench in the semiconductor substrate, applying a migration process such that the first trenches are changed to a continuous semiconductor layer extending substantially in parallel to a main surface of the semiconductor substrate and being separated from the underlying part of the substrate in a direction perpendicular to the main surface by a continuous cavity, wherein the continuous cavity is connected to at least a first opening in the substrate surface formed by the at least second trench, forming a first dielectric layer to fill at least an upper portion of the at least first opening while leaving the cavity substantially unfilled, removing portions of the continuous semiconductor layer to form at least a second opening connecting the substrate surface to the cavity, and filling at least an upper portion of the at least second opening with a second dielectric layer such that the cavity is sealed. |
