HEAT-TREATMENT METHOD FOR SINGLE-CRYSTAL SILICON WAFER

摘要

The present invention is a heat-treatment method for single-crystal silicon wafer, in which a heat treatment of a single-crystal silicon wafer is carried out under an oxidizing atmosphere, the method being characterized in that the heat treatment is carried out based on conditions determined from the correlation relationships among three elements: the heat-treatment temperature when carrying out the heat treatment, the oxygen concentration in the single-crystal silicon wafer prior to carrying out the heat treatment, and the void size in the single-crystal silicon wafer prior to carrying out the heat treatment. This provides a heat-treatment method for single-crystal silicon wafer, which, at low costs and efficiently, ensures that void defects and minute oxygen precipitation nuclei have disappeared in a single-crystal silicon wafer through heat treatment under oxidizing atmosphere.