SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

The present invention relates to a semiconductor light emitting diode comprising: a plurality of semiconductor layers; a reflection film reflecting light generated from an active layer at the opposite side of a growing substrate; and a first electrode and a second electrode supplying an electron and a hole to the semiconductor layers. Either the first electrode or the second electrode has a soldering layer containing tin (Sn) and an oxidation preventing layer above the soldering layer to prevent oxidation of the soldering layer.