| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for improving the stress relaxation resistance and thermal peeling resistance of a copper alloy for an electric-electronic component, particularly, in a Cu-Cr-Ti-Si based alloy.SOLUTION: Provided is an alloy for an electronic component made of a Cu-Cr-Ti-Si based alloy having a composition comprising, by mass, 0.15 to 0.4% Cr, 0.005 to 0.15% Ti and 0.01 to 0.05% Si, and the balance Cu with inevitable impurities, and in which, among the inevitable impurities, regarding the contents of S, O and C, the content of S is 0.005% or lower, the content of O is 0.005% or lower and the content of C is 0.004% or lower, and also, the total of the S, O and C is 0.007% or lower. Alternately, provided is an alloy for an electronic component made of a Cu-Cr-Ti-Si based alloy further comprising one or more kinds among Zn, Sn and Mg by mass, 0.001 to 1.0% in total. |
