SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

A semiconductor light-emitting device includes a first conductive type semiconductor layer having a main surface, a plurality of vertical type light-emitting structures protruding upward from the first conductive type semiconductor layer; a transparent electrode layer covering the plurality of vertical type light-emitting structures; and an insulation-filling layer disposed on the transparent electrode layer. The insulation-filling layer extends parallel to the first conductive type semiconductor layer so as to cover the plurality of vertical type light-emitting structures. A selected one of the first conductive type semiconductor layer and the insulation-filling layer, which is disposed on a light transmission path through which light generated from the plurality of vertical type light-emitting structures is radiated externally, has an uneven outer surface. The uneven outer surface is opposite to an inner surface of the selected one, and the inner surface faces the plurality of vertical type light-emitting structures.

主权项

1. A semiconductor light-emitting device comprising:
a first conductive type semiconductor layer having a main surface; a plurality of vertical type light-emitting structures protruding beyond the main surface of the first conductive type semiconductor layer; a transparent electrode layer covering at least a portion of each of the plurality of vertical type light-emitting structures; and an insulation-filling layer on the transparent electrode layer, the insulation-filling layer extending parallel to the main surface of the first conductive type semiconductor layer to cover an upper portion of each of the plurality of vertical type light-emitting structures, wherein
a selected one of the first conductive type semiconductor layer and the insulation-filling layer has an uneven outer surface opposite to an inner surface of the selected one, the inner surface facing the plurality of vertical type light-emitting structures, andat least a portion of the insulation-filling layer directly contacts the transparent electrode layer.