Low-Temperature Fabrication of Nanomaterial-Derived Metal Composite Thin Films

摘要

Disclosed are new methods of fabricating nanomaterial-derived metal composite thin films via solution processes at low temperatures (<400° C.). The present thin films are useful as thin film semiconductors, thin film dielectrics, or thin film conductors, and can be implemented into semiconductor devices such as thin film transistors and thin film photovoltaic devices.

主权项

1. A method of preparing a metal oxide thin film for use as an electrically transporting or insulating component in a thin film transistor device, the method comprising:
(a) depositing a thin film from a precursor composition comprising a fuel, one or more oxidizing agents, and optionally a base in a solvent or solvent mixture, wherein the fuel and/or at least one of the oxidizing agent(s) comprise a metal salt, and wherein the fuel and the one or more oxidizing agents are present in substantially stoichiometric amounts; (b) annealing the thin film at a temperature of less than or about 350° C. to form a metal oxide thin film; and optionally, (c) repeating steps (a) and (b) one or more times by depositing an overlying thin film on any previously deposited and annealed thin film, wherein each thin film formed by a single cycle of steps (a) and (b) has a thickness of less than or about 50 nm to provide the metal oxide thin film.